Approved For Release 2000/08/11 : CIA-RDP96-00792ROO0300280001-4 5 Vj D~TA CV CA I Nvlfod(oop C- y1gaelmwi- Approved For Release 2000/08/11 : CIA-RDP96-00792ROO0300280001-4 SG1 E Approved For Release 2000/08/11 : CIA-RDP96-00792ROO0300280001-4 Approved For Release 2000/08/11 : CIA-RDP96-00792ROO0300280001-4 Approved For Release 2000/08/11 : CIA-RDP96-00792ROO0300280001-4 B TA Approved For Release 2000/08/11 : CIA-RDP96-00792ROO0300280001-4 Approved For Release 2000/08/11 : CIA-RDP96-00792ROO0300280001-4 jcju Qtxanov Aimzuoiauna o1- xur6noruial eunctions of &LAt; ILU"ILun DL)Q.V &I'fuctirig on L, rhututiciib-itivt 11ude by Zheng Tian AiMZhe Niun Lint,"uo &inmw JLnChen L-F'uo ChL~i (Yunnan University) Li Hong Yi (Ituh4n univervity) Abj-trUct The etrange phenomena produced on tA, photoseneitive diode beld in trie polm of a elhi-Ld with parLnormuA function ure report in this Vvper.Tbe Cbaracteriptic-Curve Tracer indicutes tbt;t by concentrvt- inp, their mind upon their pu.l,n-:,or "working'19t1he children with pai-L..nur.a"l function can etait unknown rt;.diationpwhicb cv.n induce vb- norLuul cmn,~e in the pbutoseneitive diooe bLnd alter the cburL,,cttr- iEtic cume thereul'.Tbe chief ftLtures of such co,~.ngee L-re L..e follows: I 1 .JAL ntL;ative emf is produced even when the 1~botosenitive diode iF covered with a'wpiece of black 1,vp~ur. 2.The buck reeirtLnce ir conElAcuouely reduced und the lezk.:jge current increLeed surprisingly. ,).The clo--ed loop of the revizxze cb4ru.cttr-iEt&c curve whic,,~j ic due to tnt defecte of tht dioot is subject to 1,hLst cbL~.ni~ee during "Wureill, -tv is uu &,~IL~rbnt differ,~;nce in tau !,bov intaitionta ,heii ft i u e i e I L) during; the cu~-rEe of the experiment whether a piece of clack piper is placta between the diucle t~tjd the pzALa or not. 5.The charL,,cteristic curve is rustored to itE nori"l stLte whtu t'he cbild sto~pr hie or her "working". ,rifying the purunor-nal &L.nge with L, ruuiometer 41n-plifier, Af ter nv;7 the OU-tpUt p0tentiUl VUriutione are displayed wit1h Eir X-Y record. It Ir founl tbut the unknown radiStiDn ir closeby relvted to the pz~m.ror-iul function.Tbe foll6wing 1mportt-;.nt fe~;Aures tre oDrerved. 1.The children with pamnor-n4l function produce ne~;~,tive re,:)di-.)g-, on Vie rL,.dioieter in cu.aariaon witm the positive re,:,diugs obtL;ined wiien 1i6bt r4diutiun is received. ,2.Theve Lre 0iffurebces of 2-,j order of taagnitudt~ in the I;c)tentizl cb~jnt:es iroducea Detween normal ebi 1 ren vnd thL)-e %'ifted with pul-c, J nor-xi.1 functions.T1741LAter ure idtlCowbereLir tbe'former are l6tlC~ V.~.The reeulte obtuined when the gifted children uxe "working" ~~nd wbeyl they Lire not "workingO, with th4 diod6 are cone,,icuou-Sly differ-- ent.Tne vuluts are zero wLerj tuey are not "wovaing". 4-Vnell the 911LeG ch:L-Ldren were in thu course of rccorgnizing hiacen lttttl~~POI' 14*4ctic-illg telepLtby or I-A,tne cLrve- or, tnt &-y rec"'Qt" are cluselY rft.Luttu to tnuee dic-p.Luyea in trit courE:e u1, witn thc diodesrieinZ fru.ri the tee;innin.; o1, llworKinglo L.,.nd aropPirl T to tue Zeru 14evel at tne eriQ u1'. "working". 5.Vnen the gifted children were WLtCbiTI6 the rtcoralsig fL1,1)4rL.,tus, the rez-ulting m;.ciiisge were nighrzr.It steins ZLaT ttieriv Ejvl-peLred ~,n r,c,L40il Of Corleclous TOVGWUC;x, Approved For Release 2000/08/11 : CIA-RDP96-00792ROO0300280001-4 Approved For Release 2000/08/11 : CIA-RDP96-00792ROO0300280001-4 -, wk~ o.Tnei-e Lre rc,~.t alfferencer in zme gr&pt1.Lc recoraitgE tor ciiierent Incividiale among tne giftea chiiaren. 7.1n co-nj;aring nezrurement on the jL-Y recoruer for mind C GTj ct LAI 1*41 L on ulp o&& I&AW PbLL:12F IDetween pr4etitionere of Chinese mi~X,tl4L ul,le ui&cl tcAe balzea ckiildrenjtbe childi-tn showeu bigher :neL.e"r"t&t6r ots ;,ac L.9 erude, &J though a few marti&l urza prac- titioners #Aiso scarea high. lug ixouvc 2-4sz~-Its indicuto taut tue photoE-e&&z1T,.Lvc aioQe in L. 561taule GtVicV 101* Me4suread vwjectively the zv,tLz,.c infor- mt.tion eL:LitL%.u L, ciAldron sith purbLnormE.1 fujiv-L-'ons, puuiltheci in bba~ure journull, 4.6.(1661) d r- d low Approved For Release 2000/08/11 CIA-RDP96-00792ROO0300280001-4 I Approved For Release 2000/08/11 : CIA-RDP96-00792ROO0300280001-4 TAB Approved For Release 2000/08/11 : CIA-RDP96-00792ROO0300280001-4 Approved For Release 2000/08/11 CIA-RDP96-00792ROO0300280001-4 I "At" iiMiff MR. (*E T, ATDAnNit.) MON _VW/cm" sit, aflngy-P. X"Itt' 10 AWF MOR 1), A JT-i 1*Ti9MA29- 6 JE2 m M lu, rt -Tt (A-*V 4V 8 XM ~Approvecl For Release 2000/08/11 CIA (a) (b) PMU~Pffi 2 b 2. MENt, Vb-T41KT--ArA+ ko WJfX; F', QP 913 3. r-MM)41E3(b)V~tV, *TARMY WE 563 -RDP96-00792ROO0300280001 -4 (b) M3 proved For Release 2000/08/11 CIA-RDP96-00792ROO0300280001-4 IL 6 4 2 n9*rN:K. ~Elil,)PtVrP, MORAT,", WO, *-ftifia' 4. "Ask OTRSMAI. 2 (b)#*T,;MF4jn. OAR*- MR Rt, A St a T, Z A N A YIJ A Ot 190-1 100-M (ir, VHY11 iii il*) CL IRn ELM 9041f. WEI XX4AVAI VX#PS Al, TU%, A (b) 0 19V fratt M V,. liti Nil; mij mijmAf~ it, tq it 10-3- io-, (w/cm') fr-~Jkx& ([B s a). VkTf5-AQkfn93- !KY-*tPftjt35Ij 10-0-10-`(W/cm~) ([E 5 b). R NW> *o Ni~ftfr]-Mt3M AAW~ERPT*; T-A;batll 4AAW TAI ff-A, AIOCTVIPIAV-10-6-10-52~: M,-,9jRiAfjta. M6 V, -ffijj7j,&;kCH IYJ Aft 7Z VT RfO SiRUZT, M6 564 - 4 8 Approved For Release 2000/09/11 CIA-RDP96-00792ROO0300280001-4 2 Approved.For Release 2000/08/11 Cl. A-RDP96-00792ROO030028401-4 ifte 4 2 4 2 0 5 fm 3trd] 1 x 10-2. .0 2 M .7 3. "AjMLjKfM, (~k*, Effif;M, rto V, Rio ftffl irr) Ht, /TXM-23~23* A-ft, t~k a A m Y11 V A. Afat,'7X10-3. 1.2 IE 8 448M. x1v X10 2 A 0 0 io-s, 4. SiMiAMfl- 3T, Mok R 0 a IC12M *VI# F A JI, I ttgt, OE41~ 9 5 fP [E 13 xio-k r .6 1 4 1.2 X10-3 8 566 Approved For Release 2000/08/11 CIA-RDP96-00792ROO0300280011-4 1 2 2 4 fu 9 JEIO 565 7-r, YJ 1 .56 X teACATETAn, , WI ~T-35- j-,X,fj 2 3~23t~ A-fl, V~k :Mt -Ii I E?A ~k T- twqvip" ntma A ~k f1t.A -A 7 X Ap For Release 2000108/11 CIA-RDP96-00792ROO0300280001-4 4 2 lull F 4. SiRlifftffl, 7.Y[fl 11 RAO A WN-A -fax Afg AJt&ft-qPWiV2*, WM#CxTffTrAWfJ-, AFWA f6ASNM, jErx -1 . S. %R")L*±nA)f ZtT Oft& Xk9to 944,btl", ffirPlgn. I fE 5 a .A,~K LG I SA LI - X10"i 2 3 M12 FE13 Wj one na PC 2~ 3vo-r-1-014 M, wr~, wttm IRWCV~F,, *~~t tt RUZO. 6. M03 It-14-RAPI-NAR, Mgt TUcy, -VOW3$ A(qOjJR(tP[El4), VkNAAO a 9 ip, M 0 -A I Vfp~ LLPI IYJ A*rvTf:K-zI in-AWrANI It CKVII "Rjft%9:!bft)Lv± no A I n 565 566 4S 8 M App, ved For Release 2000/08/11 CIA-RDP96-00792ROO0300280001-4 Approved For Release 2000/08/11 C'IA-RDP96-00792ROO0300280001-4 low L4 L2 - 2 0 DD 30 120 .130 140 19 9-0 21 OR 14 2. 39, V-AT;hMAA*. AN, Fh-T 3. Rff)V-A 2CU f~~[L 2AP;FN-4-&*.9 -4. x It 3-511 M, 4 -T- - At R-L P)~ V 190-1 10OWM ID 9W P- b*8R#b 4t ~Z Nt -, *f*. tftffjjftff 4t3j*,Wj jF, _tf E Pj%3j,j#O ~Ktj X, M,&I fn I 7k FIE TOORC 4 1981) 348 Approved For Release 2000/08/11 : CIA-RDP96-00792ROO0300280001-4 Approved For Release 2000/08/11 : CIA-RDP96-00792ROO0300280001-4 TAB SEI Approved For Release 2000/08/11 : CIA-RDP96-00792ROO0300280001-4 Approved For Release 2000/08/11 : CIA-RDP96-00792ROO0300280001-4 THE STRANGE PHENOMENON OF PARANORMAL FUNCTIONS OF THE HUMAN BODY EFFECTING ON A PHOTOSENSITIVE DIODE: ANALYSIS AND RECOMMENDATIONS FOR FURTHER STUDY Experimental Procedure Based upon the abstract provi,ded, original figure captions and SG1A the following experimental procedures and apparatus appear to have been utilized for the first set of experiments: ~ A photodiode with a sensitivity of 10-7 watts cm-2 in a bandwidth of 190-1100 rim was used. From Sze (Figure 24 on attachments) we expect this to be a silicon device. ~ The photodiode was contained in a "well" of some sort surrounded by a "protection ring" and covered with black paper. At present the thermal and electrical properties of this encapsulation are unknown. 441W 6 A characteristic curve tracer (Model JT-1) was used to reverse bias the diode and measure its voltage- current response under various conditions. ~ The curve tracer was set up so that the voltage axis was .5 V per dimension and the current .01 mA/div. Diode breakdown (the "knee" of the curve) was -6V with a 1 KQ current limiting resistor. Each subject then held the photodiode assembly in their palm and attempted to influence the device. Successful experiments were marked by change in the I/V characteristic from that typical of a diode to one more like a resistor with some parallel capacitance as seen in Figure 2b. t In fabri- cating prototype diodes this type of curve is seen quite often when the ',blocking" contact fails or the diode is partially shorted by conductive surface states. Physics of Semiconductor Devices, S. M. Sze. tFigure number used in original Chinese text. 1 Approved For Release 2000/08/11 : CIA-RDP96-00792ROO0300280001-4 Approved For Release 2000/08/11 : CIA-RDP96-00792ROO0300280001-4 A second set of experiments was carried out with apparently the same type of photodiode: ~ The output of the diode has been amplified by a It radiometer" amplifier. It is not clear whether the diode is reverse biased or used as a solar cell with only the carrier diffusion length as an active volume. ~ With "normal" children the amplified output was 10-5-10-6 2 W/cm ~ With "exceptional" children bursts of signal (noise?) were observed up to 10-2-10-3 W/Cm2 over periods of several minutes. Analysis The results of both sets of experiments are open to several explana- tions due to the ambiguous nature of the experimental procedure. ~ The change in I/V characteristic could be due to simple heating of the diode. Attachments one and two both show how leakage current varies with temperature. A 1& C rise above ambient could be expected from a hand-held device, resulting in a larger leakage current. In addition, the breakdown knee will sometimes move toward lower voltages as the temperature rises resulting in noise or breakdown bursts. Finally, surface states which are not seen at room temperature may become active at higher temperatures resulting in the hysteresis seen in the "exceptional" I/V characteristics. ~ If the diode and its container are not adequately electrically shielded, the effect of holding the assembly in one's hand would be to add components of stray resistance and capacitance to the output signal. This effect would be similar to that shown in Figure 2b. Anyone who has worked with electrometers is familiar with this effect. The usual cure is to use BNC connectors and coaxial cable. ~ Finally, the infrared radiation associated with a black body at skin temperature (310K maximum) might cause some of the signals seen in the second set of experiments. In particular, a warmer than room temperature diode could 2 Approved For Release 2000/08/11 : CIA-RDP96-00792ROO0300280001-4 Approved For Release 2000/08/11 : CIA-RDP96-00792ROO0300280001-4 be operating in an already high leakage condition whereby extra input (static charge, IR radiation) might initiate carrier avalanche--yielding large noise bursts. Attached are several pages of figures and calculations which demonstrate that the sensitivity of the detector lies clearly in the IR region. Furthermore, application of the Stefdn-Boltzmann law demonstrates that -5 X 10-3 W/cm2 may be available from a black body of 10% efficiency. However the peak of the distribution falls at about 9-10 p. At this wavelength neither a silicon or germanium diode is very efficient. This result suggests one of the two preceding mechanisms as a more likely candidate. 'WAW 3 Approved For Release 2000/08/11 : CIA-RDP96-00792ROO0300280001-4 Approved For Release 2000/08/11 CIA-RDP96-00792ROO03002890/4A L-6 q-t~ CQ-; _f, js, V I I S' ; F, L - C- (:Iz) JaSZ ke, c 49 All, jel, L&/- A4 Ile C_7 dft, Approved For Release 2000/08/11 CIA-RDP96-00792ROO0300280001-4 "2 0. z 0., W 2 U. U. WO, z 00 W F- U W Q LL LL W 00. 0.4 0.6 i 0.8 1 1.2 1.4 1.6 WAVELENGTH (MICRONS) # 7Z FI 24 Effective quantum efficiency (hole-electron pairs/photon) versus wavelength for Ge .nd:T photodetectors. (After Melchior and Lynch, Ref. 39.) R C IPD(w) C -0 (a) -2 LS -2 LR Fig. 25 (a) Equivalent circuit and (b) noise equIvalent circuit of a photodiode, where R Is the series resistance and C Is the Junction capacitance. (After D!Domenlco and Svelto, Ref. 35.) V, C' 1 4 Photodeteaors available power for the photo 1 P." 1IPD((0)1 It is interesting to compare E For a typical photodiode with a photoconductor with the sar available power from the phot from the photoconductor. The signal-to-noise perforrr equivalent noise circuit shown noise source due to the serie, source. The signal-to-noise ral (S1N)p.,.,.' - 41 Comparing Eq. (44) with Eq. at high-level detection where SNR is comparable; at low-lev however, the SNR of the pho~ B. The p-1-n Photodiode depletion-layer photodetector. (the intrinsic layer) can be tai frequency response. A typical Fig. 26(a). Absorption of ligh pairs, Pairs produced in the de will eventually be separated by external circuit as carriers drif Under steady-state conditioz biased depletion layer is given where Jd, is the drift current region and Jdiff is the diffusior side the depletion layer in the I reversc-biased junction. We E assumptions that the thermal g surface n layer is much thinn, electron generation rate is giv( 4-0rpv,e_'&For- Release 2000/08/11 CIA-RDP96-00792RO00.300280001-4 Approved For Release 2000/08/11 : CIA-RDP96-00792ROO0300280001-4 SILICON CHARGED-PARTICLE DETECTORS characteristics. The detector changes include in- creased noise and changes in voltage drop across the load resistor, which require adjustments to the applied bias voltage, which in turn change the electric-field strength. Thus carrier trapping and increased detector noise are degrading to energy resolution. Resolution degradation appears as a broadening of the response for a monoenergetic source. With increasing doses of neutrons, charged particles, or fission frag- ments, the low-energy side of the response peak may begin to show a definite secondary peak. Continued irradiation results in further broadening, until, in ex- treme cases, the multiple peaks may merge com- pletely. Electron bombardment tends to increase leak- age current, resulting in excess detector noise, which broadens response peaks. Some of these damage ef- fects may undergo a degree of annealing, but there is always a significant residual deterioration after a suff i- cient dose has been accumulated. Partially depleted detectors are more susceptible than are fully depleted devices to deterioration from radia- tion damage. Radiation damage for different types of detectors are compared in Table 2, which gives the dose for various particles to significantly deteriorate the detectors. OPERATING TEMPERATURE As a rule of thumb, increasing the operating tempera ture of a charged-particle detector causes thedpnknaa current to incrose by a factor of' 3 for mch 1 OOC riseL. -------C p-wid ultimate breakdown of the detector (usually between 45 and 550C). The effects of high-temperature break- down are permanent and are not covered by the war- ranty terms. An additional effect is the shift in detector bias caused by the higher leakage current. This leak- age current increases the voltage drop across the se- ries bias resistor, thus lowering the bias voltage across the detector. When high-temperature operation is necessary, a constant sensitive depth is maintained over the entire operating temperature range only if a totally depleted detector is used with sufficient overbias to compensate for the drop across the series bias resistor, which should be as small as possible (usually 1 to 3 Mn is adequate). Decreasing the operating temperature of the detector reduces junction noise and leakage current. However, the capacitance of the device is a constant limiting parameter of the system noise. Another limitation to successful operation at low temperatures is the expan- sion coefficient of the detector's component parts. The expansion coefficient is similar for silicon and for lavite, the ring in which the silicon wafer is mounted, but is quite different for the bonding epoxy. Therefore at very low temperatures the epoxy may crack, causing exces- sive noise or loss of contact. The probability of low- temperature damage increases with detector size. For cooled operation, detectors fabricated with cryogenic epoxy may be special ordered from ORTEC. Another effect of decreasing the operating tempera- ture of a silicon detector is an increase of the average energy necessary to create an electron-hole pair, e. Due to a widening of the bandgap of silicon in the temperature range from 300 K to 80 K, e increases. from 3.62 eV to 3.72 eV. A result of this increase is an apparent shift in energy of a measured spectroscopic line. For instance, Fig. 8 shows the apparent peak shift of the 5.477-MeV 24'Arn alpha particle peak in the 4.2- K to 320-K temperature range measured with silicon charged-particle detectors. SHOCK AND VIBRATION Many ORTEC surface-barrier detectors have been subjected to the shock and vibration tests required for Table 2. Comparison of Radiation Damage In Silicon and Germanium Particle Detectors Radiation Damage (particles/cm2) Alpha$ I Fission Type of Detector I Electrons I Fast Neutrons I Protons I Particle Fragments Surface barrier 1013 Diffusion junction 1013 ifte Si(Li) 1012 Ge(LI) 1012 1010 101, 101, 1012 1010 109 10, loll 109-101, 108-101, Approved For Release 2000/08/11 : CIA-RDP96-00792ROO0300280001-4 27 2RO003,0028000'1~7 Approved-for-Re -C-fA--cRDP96,0079 4- cr L: *rA I W ;io It I - t - H A 4 lll!~ 4 t i , 4 ~ I t TT 44 1 + 4- -4 _ A) 1 + T _ It 1 1 4 1 If 1 + 4- 1 __T 4 4- T j- 1 PRO, A 4PRO, I t n f I Ill f i1l it ' f ill! I I L I f I I ~ - rgi L j.. 1 r W I I 6 2 8 1 1. T Chap. 39 Nature and Propagation of Light Fig. 39,-17 -injr -I~arged, (a) Show that the Wrlif Ai volume. (b) Show that ~ai~My integrating the Poynting -a equal to the rate at which the energy density for all points within Lhe Poynting vector point of view, gh the wires but through the space we must first find B, Which is the ring the charging process; see Fig. CHAPTER 40 40-1 Light and the Electromagnetic Spectrum Light was shown by Maxwell to be a component of the electromagnetic rpectrum of Fig. 40-1. All these waves are electromagnetic in nature and have the same speed c in free space. They differ in wavelength (and thus in frequency) only, which means that the sources that give rise to them and the instruments used to make measurements with them are rather different. * The electromagnetic spectrum has no definite upper or lower limit. The labeled regions in Fig. 40-1 represent frequency intervals within which a common body of experimental technique, such as common sources and com- mon detectors, exists. All such regions overlap. For example, we can pro- duce radiation of wavelength 10' meter either by microwave techniques (microwave oscillators) or by infrared techniques (incandescent sources). 71 tA Frequency, ~Clesls 103 lo, 101 108 101 10 1010 low 10" Ion 10 X-'Ays Radio ;G,_d_T UU. 106 104 102 1 10-2 10-4 10-0 10-8 10-10 10-a 10-14 Waveleno, "W"M Fig. 40-1 The electromagnetic spectrum. Note that the wavelength and frequency scales are logarithmic. *For a report of electromagnetic waves with wavelpngths as long as 1.9 X 107 miles the student should oonsult an article by James Heirtzler in the ScientiflIc American for March 1962. 993 110101 Approved For 7 _F t T", ;4-; "4 NATURE AND PROPAGATION OF LIGHT 10D SD 61) 40 21) Chap. 4( 400 450 500 550 600 6W 700 Wavelength, mu fig. 40-2 The relative eye sensitivity of an assumed standard olmerver at different wave- lengths for normal levels of illumination. The shaded areas represent the (continuously graded) oolor sensations for normal vision. "Light" is defined here as radiation that can affect the eye. Figure 40-2, which sho 'we the relative eye sensitivity of an assumed standard obsemer to radiations of various wavelengths, shows that the center of the visible region is about 5.55 X 10-7 meter. Light of this wavelength produces the sensa- tion of yellow-green.* In optics we often use the micron (abbr. A4) the millimicron (abbr. mA), and the Angstrom (abbr. A) as units of wavelength. They are defined from I ju - 10--6 meter I miA - 10' meter 1 A - 10`0 meter. Thus the center of the visible region can be expressed as 0.555 A, 555 mA, or 5550 A. _W Thel'imuwi of the visible spectrum are not well defined because the eye sensitivity curve approaches the aids asymptotically at both long and short wavelengths. If the limits are taken, arbitrarily, as the wavelengths at which the eye sensitivity has dropped to 1%oof its ma. imum value these limits are about 4300 A and 6900 A leWthan a factor of two in wavelength. The eye can Met radiMtiOntbetyOnld these limits if it is intense enough. In many experiments in physics one can use photographic plates or light-sensi- tive electronic detectors in place of the hurn n eye. 0 See "Experiments in Color Vision" by Ed-%in H. Land, Scientific American, May 1959, and especially "Color and Perception: the Work of Edwin Land in the Light of Current Concepts" by M. H. Wilson and R. W. Brocklebank, Contemporary Physics, December 1961, for a fascinating discussion of the problems of perception and the distinc- Uon between color as a characteristic of light 96nd color as a perceived property of objects.